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參數(shù)資料
| 型號(hào)： | MJ11013 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 30 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 157K |
| 代理商： | MJ11013 |
3
Motorola Bipolar Power Transistor Device Data
30 k
20 k
0.3
Figure 2. DC Current Gain (1)
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1
2
3
10
20
30
7 k
5 k
3 k
2 k
700
500
Figure 3. Small–Signal Current Gain
h
2
1
10
f, FREQUENCY (kHz)
20
30
50
70
200
300
500
1.0 k
0.2
0.05
0.02
0.01
10 k
h
VCE = 5 Vdc
TJ = 25
°
C
300
5
7
100
5
0.1
Figure 4. “On” Voltages (1)
IC, COLLECTOR CURRENT (AMP)
100
0
VBE(sat)
Figure 5. Active Region DC Safe Operating Area
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
V
4
3
2
1
50
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3
5
10
20
200
10
5
0.01
I
2
1
0.2
0.1
0.05
0.5
0.02
50
TJ = 25
°
C
IC/IB = 100
VCE = 3 Vdc
IC = 10 mAdc
TJ = 25
°
C
0.1
0.5
0.005
700
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
2
7
30
70
100
2
20
50
0.2
0.5
1
10
5
VCE(sat)
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
BONDING WIRE LIMITATION
THERMAL LIMITATION @ TC = 25
°
C
SECOND BREAKDOWN LIMITATION
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tions e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ11014 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJ11014 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11015 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11013 | POWER TRANSISTORS(30A,60-120V,200W) |
| MJ11014 | POWER TRANSISTORS(30A,60-120V,200W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ11014 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 30 Amp Darlington Transistors NPN |
| MJ11015 | 功能描述:達(dá)林頓晶體管 30A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11015 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11015_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Current Complementary Silicon Transistors |
| MJ11015G | 功能描述:達(dá)林頓晶體管 30A 120V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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