參數(shù)資料
型號(hào): MJB5742T4G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, CASE 418B-04, D2PAK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 126K
代理商: MJB5742T4G
MJB5742T4G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 2)
CollectorEmitter Sustaining Voltage (IC = 50 mA, IB = 0)
VCEO(sus)
400
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
CollectorEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
CollectorEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
CollectorEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
2
3
2.2
Vdc
BaseEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
BaseEmitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
BaseEmitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
2.5
3.5
2.4
Vdc
Diode Forward Voltage (Note 3) (IF = 5 Adc)
Vf
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle v 1%)
td
0.04
ms
Rise Time
tr
0.5
ms
Storage Time
ts
8
ms
Fall Time
tf
2
ms
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tsv
4
ms
Crossover Time
tc
2
ms
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.
3. The internal CollectortoEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
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MJD112I 2 A, 100 V, NPN, Si, POWER TRANSISTOR
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