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參數(shù)資料
| 型號： | MJB5742T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 126K |
| 代理商： | MJB5742T4G |
MJB5742T4G
http://onsemi.com
3
V
BE
,BASE-EMITTER
VOL
TAGE
(VOL
TS)
trv
IC
VCE
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
10% VCE(pk)
10%
IC(pk)
2% IC
IB
tfi
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
5
2000
h
FE
,DC
CURRENT
GAIN
VCE = 5 V
1
+25
°C
210
1000
100
10
0
TC, CASE TEMPERATURE (°C)
0
40
120
160
60
POWER
DERA
TING
F
ACT
OR
(%)
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
2.4
1.6
0.4
Figure 3. DC Current Gain
Figure 4. BaseEmitter Voltage
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
°C
-55
°C
20
2.2
1.4
1.8
1
0.6
+150
°C
+25
°C
-55
°C
TYPICAL CHARACTERISTICS
V
CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
Figure 5. CollectorEmitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
1
0.2
0.1
1.4
0.8
1.2
10
5
2
1
0.5
0.2
1.6
1.8
0.6
0.4
hFE = 20
+25
°C
-55
°C
+150
°C
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