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參數(shù)資料
| 型號(hào)： | MJD117 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 0K |
| 代理商： | MJD117 |
MJD112 MJD117
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS – continued
Collector–Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
ICEX
—
10
500
Adc
Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
—
10
Adc
Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
—
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
—
12,000
—
—
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
—
2
3
Vdc
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
—
4
Vdc
Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
—
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
—
200
100
pF
* Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
0.04
0.2
4
0.1
0.06
0.6
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t,
TIME
(
s)
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
V2
APPROX
+ 8 V
0
≈ 8 k
SCOPE
VCC
– 30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
s
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
tr
td @ VBE(off) = 0 V
PNP
NPN
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
–12 V
TUT
RB
D1
≈ 60
0.4
2
IB1 = IB2
TJ = 25°C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD117-001 | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117-001G | 制造商:ON Semiconductor 功能描述:Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail |
| MJD117-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD117G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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