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參數(shù)資料
| 型號(hào)： | MJD31C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor(General Purpose Amplifier and Low Speed Switching Applications)(NPN硅外延晶體管（通用放大器和低速開關(guān)作用）) |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 444K |
| 代理商： | MJD31C |
2000 Fairchild Semiconductor International
Rev. A. February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
CoolFET
CROSSVOLT
E
2
CMOS
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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Definition of Terms
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Definition
Advance Information
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Design
This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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No Identification Needed
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This datasheet contains final specifications. Fairchild
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD32 | PNP Silicon Darlington Transistor(PNP達(dá)林頓硅晶體管（通用放大器和低速開關(guān)作用）) |
| MJD340 | Complementary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| MJD350 | Complementary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| MJD340 | NPN High Voltage Power Transistors(NPN高電壓功率晶體管) |
| MJD350 | PNP High Voltage Power Transistors(PNP高電壓功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31C1 | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C-1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-252VAR |
| MJD31C-13 | 功能描述:兩極晶體管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
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