參數(shù)資料
型號(hào)： MJD41C
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Power Transistors
中文描述： 6 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝： DPAK-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 47K
代理商： MJD41C
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
M
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CES
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
100
100
5
6
10
2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°
C
°
C
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.3A
V
CE
= 4V, I
C
= 3A
I
C
= 6A, I
B
= 600mA
V
CE
= 6A, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
Min.
100
Max.
Units
V
μ
A
uA
mA
50
10
0.5
30
15
75
1.5
2
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
V
3
MHz
MJD41C
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP41 and TIP41C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
相關(guān)PDF資料
PDF描述
MJD41C-1 SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41C SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41CT4 SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD42_MJD42C General Purpose Amplifier Low Speed Switching Applications
MJD42C 10 AMP SUBMINIATURE POWER RELAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD41C_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41CNPN 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CRL 功能描述:兩極晶體管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*