參數(shù)資料
型號(hào): MJD42
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: General Purpose Amplifier
中文描述: 6 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝: DPAK-3
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 47K
代理商: MJD42
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
M
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
-0.01
-0.1
-1
-10
1
10
100
1000
V
CE
= -2V
h
F
,
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
B
(
C
(
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
1000
C
o
[
V
CB
[V], COLLECTOR-BASE VOLTAGE
-0.01
-0.1
-1
-10
0.01
0.1
1
10
t
R
V
CC
= -30V
I
C
= 10.I
B
t
D
V
BE
(off)=-5V
t
R
,
D
μ
s
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
0.01
0.1
1
10
V
CC
= -30V
I
C
= 10.I
B
t
STG
t
F
t
S
,
F
μ
s
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
5ms
DC
100
μ
s
500
μ
s
1ms
I
CP
(max)
I
C
(max)
I
C
[
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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MJD42C1 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD42C-1 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD42C1G 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2