參數(shù)資料
型號: MJD50
廠商: 意法半導(dǎo)體
英文描述: High Voltage Fast-Switching NPN Power Transistor(高壓快速開關(guān)NPN功率晶體管)
中文描述: 高壓快速NPN電源開關(guān)晶體管(高壓快速開關(guān)npn型功率晶體管)
文件頁數(shù): 6/6頁
文件大小: 97K
代理商: MJD50
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MJD50
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD50_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor
MJD50-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
MJD50G 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD50T4 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD50T4G 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2