Analog Integrated Circuit Device Data
10
Freescale Semiconductor
908E625
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
All characteristics are for the analog chip only. Please refer to the specification for 68HC908EY16 for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER
TXD Low to LIN Low
TXD High to LIN High
LIN Low to RXD Low
LIN High to RXD High
TXD Symmetry
RXD Symmetry
tTXD-LIN-low
tTXD-LIN-high
tLIN-RXD-low
tLIN-RXD-
high
tTXD-SYM
tRXD-SYM
–
-2.0
–
4.0
–
6.0
8.0
2.0
μs
80% to 20%
SRF
-1.0
-2.0
-3.0
V/
μs
20% to 80%, RBUS > 1.0 kΩ, CBUS < 10 nF
SRR
1.0
2.0
3.0
V/
μs
SRS
-2.0
–
2.0
μs
HALL-EFFECT SENSOR INPUTS (H1:H3)
Propagation Delay
tHPPD
–
1.0
–
μs
AUTONOMOUS WATCHDOG (AWD)
AWD Oscillator Period
tOSC
–
40
–
μs
AWD Period Low = 512 tOSC
TJ < 25 °C
TJ ≥ 25 °C
tAWDPH
16
27
22
34
28
ms
AWD Period High = 256 tOSC
TJ < 25 °C
TJ ≥ 25 °C
tAWDPL
8.0
13.5
11
17
14
ms
AWD Cyclic Wake-up On Time
tAWDHPON
–
90
–
μs
Notes
13.
All LIN characteristics are for initial LIN slew rate selection (20 kBaud) (SRS0:SRS1= 00).
14.
15.