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參數(shù)資料
| 型號： | MMFT2N02EL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2 Amps, 20 Volts N-Channel(2A，20V，N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 功率MOSFET 2安培，20伏特N溝道（第2A，20V的，?溝道增強型功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MMFT2N02EL |
MMFT2N02EL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250
μ
A)
Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0)
Gate–Body Leakage Current, (VGS = 15 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
20
–
–
Vdc
–
–
10
μ
Adc
–
–
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.8 A)
Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.6 A)
Forward Transconductance, (VDS = 10 V, ID = 0.8 A)
VGS(th)
RDS(on)
VDS(on)
gFS
1
–
2
Vdc
–
–
0.15
Ohms
–
–
0.32
Vdc
–
2.6
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS= 15 V,
(VDS = 15 V,
VGS
1 MH )
f = 1 MHz)
Ciss
Coss
Crss
–
580
–
Output Capacitance
–
430
–
pF
Reverse Transfer Capacitance
–
250
–
SWITCHING CHARACTERISTICS
Turn–On Delay Time
td(on)
tr
td(off)
tf
Qg
–
16
–
Rise Time
(VDD = 15 V, ID = 1.6 A
VGS= 5 V RG= 50 ohms
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
RGS 25 ohms)
–
73
–
ns
Turn–Off Delay Time
–
77
–
Fall Time
–
107
–
Total Gate Charge
(VDS= 16 V, ID= 1.6 A,
(VDS = 16 V, ID = 1.6 A,
VGS
See Figures 15 and 16
–
20
–
Gate–Source Charge
Qgs
Qgd
–
1.7
–
nC
Gate–Drain Charge
–
6
–
SOURCE DRAIN DIODE CHARACTERISTICS
(Note 2.)
Forward On–Voltage
IS = 1.6 A, VGS = 0
IS = 1.6 A, VGS = 0,
dlS/dt = 400 A/
μ
s,
VR = 16 V
VSD
ton
–
0.9
–
Vdc
Forward Turn–On Time
Limited by stray inductance
Reverse Recovery Time
trr
–
55
–
ns
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
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|---|---|
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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