Table 14 provides the DDR2 capacitanc" />
參數(shù)資料
型號： MPC8378VRANGA
廠商： Freescale Semiconductor
文件頁數(shù)： 38/128頁
文件大?。?/td> 0K
描述： MPU POWERQUICC II 800MHZ 689PBGA
標準包裝： 27
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 800MHz
電壓： 1.05V
安裝類型： 表面貼裝
封裝/外殼： 689-BBGA 裸露焊盤
供應商設備封裝： 689-TEPBGA II（31x31）
包裝： 托盤
MPC8378E PowerQUICC II Pro Processor Hardware Specifications, Rev. 8
Freescale Semiconductor
17
Table 14 provides the DDR2 capacitance when GVDD(typ) = 1.8 V.
This table provides the recommended operating conditions for the DDR SDRAM component(s) when
GVDD(typ) = 2.5 V.
Output low current (VOUT =0.3 V)
IOL
13.4
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
5. See AN3665, “MPC837xE Design Checklist,” for proper DDR termination.
Table 14. DDR2 SDRAM Capacitance for GVDD(typ) = 1.8 V
Parameter
Symbol
Min
Max
Unit
Note
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 15. DDR SDRAM DC Electrical Characteristics for GVDD (typ) = 2.5 V
Parameter
Symbol
Min
Max
Unit
Note
I/O supply voltage
GVDD
2.375
2.625
V
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.18
V
—
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.9 V)
IOH
–15.2
—
mA
—
Output low current (VOUT = 0.38 V)
IOL
15.2
—
mA
—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ V
OUT ≤ GVDD.
5. See AN3665, “MPC837xE Design Checklist,” for proper DDR termination.
Table 13. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V (continued)
Parameter
Symbol
Min
Max
Unit
Note
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