Table 13 p" />
參數(shù)資料
型號: MPC8544AVTAQG
廠商: Freescale Semiconductor
文件頁數(shù): 28/117頁
文件大小: 0K
描述: IC MPU POWERQUICC III 783-FCBGA
標準包裝: 1
系列: MPC85xx
處理器類型: 32-位 MPC85xx PowerQUICC III
速度: 1.0GHz
電壓: 1V
安裝類型: 表面貼裝
封裝/外殼: 783-BBGA,F(xiàn)CBGA
供應(yīng)商設(shè)備封裝: 783-FCPBGA(29x29)
包裝: 托盤
配用: MPC8544DS-ND - BOARD DEVELOPMENT SYSTEM 8544
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 6
18
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 13 provides the DDR I/O capacitance when GVDD(typ) = 2.5 V.
Table 14 provides the current draw characteristics for MVREF.
6.2
DDR SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR SDRAM interface.
6.2.1
DDR SDRAM Input AC Timing Specifications
Table 15 provides the input AC timing specifications for the DDR SDRAM when GVDD(typ) = 1.8 V.
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.8 V)
IOH
–16.2
mA
Output low current (VOUT = 0.42 V)
IOL
16.2
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
V
OUT GVDD.
Table 13. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 14. Current Draw Characteristics for MVREF
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Current draw for MVREF
IMVREF
—500
μA1
Note:
1. The voltage regulator for MVREF must be able to supply up to 500 μA current.
Table 15. DDR2 SDRAM Input AC Timing Specifications for 1.8-V Interface
At recommended operating conditions.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—MVREF – 0.25
V
AC input high voltage
VIH
MVREF + 0.25
V
Table 12. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V (continued)
Parameter/Condition
Symbol
Min
Max
Unit
Notes
相關(guān)PDF資料
PDF描述
IDT70T653MS15BC8 IC SRAM 18MBIT 15NS 256BGA
MPC8544AVTANG IC MPU POWERQUICC III 783-FCBGA
1-1734798-2 CONN HOUSING FPC 12POS R/A SMD
IDT70T3539MS133BC8 IC SRAM 18MBIT 133MHZ 256BGA
1-2013928-4 CONN FPC 37POS .3MM FLIP LOC SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPC8544AVTAQGA 制造商:Freescale Semiconductor 功能描述:PQ38K 8544 - Bulk
MPC8544AVTARJ 功能描述:微處理器 - MPU PQ3 8544 COMMERCIAL RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:536 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-324
MPC8544AVTARJA 功能描述:數(shù)字信號處理器和控制器 - DSP, DSC PQ38K 8544 RoHS:否 制造商:Microchip Technology 核心:dsPIC 數(shù)據(jù)總線寬度:16 bit 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:2 KB 最大時鐘頻率:40 MHz 可編程輸入/輸出端數(shù)量:35 定時器數(shù)量:3 設(shè)備每秒兆指令數(shù):50 MIPs 工作電源電壓:3.3 V 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-44 安裝風格:SMD/SMT
MPC8544COMEDEV 功能描述:開發(fā)板和工具包 - 其他處理器 EXPRESS KIT RoHS:否 制造商:Freescale Semiconductor 產(chǎn)品:Development Systems 工具用于評估:P3041 核心:e500mc 接口類型:I2C, SPI, USB 工作電源電壓:
MPC8544CVTALF 功能描述:微處理器 - MPU PQ38K 8544 RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:536 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:FBGA-324