參數(shù)資料
型號： MPC8569VTANKGB
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： RISC PROCESSOR, PBGA783
封裝： 29 X 29 MM, 1 MM PITCH, PLASTIC, BGA-783
文件頁數(shù)： 64/126頁
文件大?。?/td> 2847K
代理商： MPC8569VTANKGB
MPC8569E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 0
Power Characteristics
Freescale Semiconductor
42
2.1.4
Power-on Ramp Rate
This section describes the AC electrical specifications for the power-on ramp rate requirements. Controlling the maximum
Power-On Ramp Rate is required to avoid falsely triggering the ESD circuitry. The following table provides the power supply
ramp rate specifications.
2.2
Power Characteristics
The following table shows the power dissipations of the VDD supply for various operating core complex bus clock (CCB_clk)
frequencies versus the core, DDR data rate, and QUICC Engine block frequencies. Note that these numbers are based on design
estimates only and are preliminary. More accurate power numbers are available after the measurement on the silicon is
complete.
Table 7. Power Supply Ramp Rate
Parameter
Min
Max
Unit
Notes
Required ramp rate for all voltage supplies (including OVDD/CVDD/
GVDD/BVDD/SVDD/LVDD, All VDD supplies, MVREF and all AVDD sup-
plies.)
—
36000
V/s
1, 2
Note:
1. Ramp rate is specified as a linear ramp from 10 to 90%. If non-linear (for example, exponential), the maximum rate of change
from 200 to 500 mV is the most critical as this range may falsely trigger the ESD circuitry.
2. Over full recommended operating temperature range (see Table 3).
Table 8. MPC8569E Power Dissipation
Power Mode
Core
Frequency
(MHz)
Platform
Frequency
(MHz)
DDR Data
Rate
Frequency
(MHz)
QUICC
Engine
Block
Frequency
(MHz)
VDD
Core
(V)
Junction
Temperature
(
° C)
Power5
Notes
Typical
800
400
600
400
1.0
65
3.4 W
1, 2
Thermal
105
4.9 W
1, 3
Maximum
5.4 W
1, 4
Typical
1067
533
667
533
1.0
65
3.9 W
1, 2
Thermal
105
5.4 W
1, 3
Maximum
6.0 W
1, 4
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