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參數(shù)資料
| 型號(hào)： | MRF1517NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大?。?/td> | 288K |
| 代理商： | MRF1517NT1 |
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10
RF Device Data
Freescale Semiconductor
MRF1517NT1
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and
η
D
> 50 %.
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 29. Series Equivalent Input and Output Impedance
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and
η
D
> 50 %.
f
MHz
Z
in
Ω
Z
OL
*
Ω
440
1.62 +j3.41
3.25 +j0.98
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and
η
D
> 50 %.
V
DD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
460
1.85 +j3.35
3.05 +j0.93
480
1.91 +j3.31
2.54 +j0.84
f
MHz
Z
in
Ω
Z
OL
*
Ω
480
1.06 +j1.82
3.51 +j0.99
V
DD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
500
0.97 +j2.01
2.82 +j0.75
520
0.975 +j2.37
1.87 +j1.03
f
MHz
Z
in
Ω
Z
OL
*
Ω
400
1.96 +j3.32
2.52 +j0.39
420
2.31 +j3.56
2.61 +j0.64
440
1.60 +j3.45
2.37 +j1.04
520
Z
o
= 10
Ω
Z
in
f = 480 MHz
400
Z
o
= 10
Ω
Z
in
f = 440 MHz
Z
OL
*
480
Z
o
= 10
Ω
Z
in
f = 440 MHz
Z
OL
*
Z
OL
*
f = 440 MHz
400
V
DD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
440
f = 480 MHz
f = 480 MHz
520
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1517NT1 | 制造商:Freescale Semiconductor 功能描述:Transistor |
| MRF1517NT1_08 | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1517NT1-CUT TAPE | 制造商:Freescale 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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| MRF1518N | 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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