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參數(shù)資料
| 型號： | MRF1570NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 16/18頁 |
| 文件大小： | 441K |
| 代理商： | MRF1570NT1 |
16
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
PACKAGE DIMENSIONS
NOTES:
1. CONTROLLING DIMENSION: INCH .
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSION D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSION D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSIONS b1 AND b2 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
6. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
L
A1
c1
D
C
A
A
M
aaa
D
SEATING
PLANE
SEATING
PLANE
B
E1
P
D A
e
4X
D
4X
b2
aaa
D1
B
M
D B
M
aaa
E
Y
Y
A2
DIM
A
A1
A2
D
D1
D2
MIN
0.098
0.000
0.100
0.928
0.810 BSC
0.608 BSC
MAX
0.108
0.004
0.104
0.932
MIN
2.49
0.00
2.54
23.57
20.57 BSC
15.44 BSC
MAX
2.74
0.10
2.64
23.67
MILLIMETERS
INCHES
E
E1
E2
E3
0.296
0.248
0.170 BSC
0.241
0.304
0.252
7.52
6.30
4.32 BSC
6.12
7.72
6.40
L
P
0.060
0.126
0.070
0.134
1.52
3.20
1.78
3.40
b1
b2
b3
0.088
0.066
0.067
0.094
0.072
0.073
2.24
1.68
1.70
2.39
1.83
1.85
c1
e
e1
0.007
0.104 BSC
0.210 BSC
0.011
0.178
0.279
0
6
0
6
aaa
bbb
1
2
3
5
6
7
0.004
0.008
2.64 BSC
5.33 BSC
0.10
0.20
4X
b1
H
DATUM
PLANE
4
2
1
6
5
7
VIEW Y-Y
3
8
bbb C
E2
D2
A
DRAIN ID
B
4
8
B
2X
e1
2X
b3
(b1)
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. DRAIN
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. GATE
7. GATE
8. SOURCE (COMMON)
NOTE 6
E3
E3
0.245
6.22
CASE 1366-04
ISSUE D
TO-272-8 WRAP
PLASTIC
MRF1570NT1
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| MRF1570NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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| MRF158 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF160 | 功能描述:射頻MOSFET電源晶體管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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