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參數(shù)資料
| 型號(hào)： | MRF19085LSR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 584K |
| 代理商： | MRF19085LSR3 |
3
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
G
ps
—
13
—
dB
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
η
—
36
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
IMD
—
-31
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 850 mA, f = 1930 MHz and
1990 MHz, Tone Spacing = 100 kHz)
IRL
—
-12
—
dB
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 850 mA, f = 1990 MHz)
P1dB
—
90
—
W
F
Freescale Semiconductor, Inc.
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF19085 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085LR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085R3 | RF Power Field Effect Transistors |
| MRF19085SR3 | CONN, 10-PIN HDR, SMT |
| MRF19090S | RF MOSFET(射頻MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19085R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19085SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
| MRF19090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
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