參數(shù)資料
型號(hào): MRF19085LSR3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power Field Effect Transistors
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 584K
代理商: MRF19085LSR3
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
55
50
45
40
35
30
25
20
10
100
4
70
60
50
40
30
20
10
0
5.00
3.75
2.50
1.25
0.00
1.25
2.50
3.75
5.00
Figure 3. 2-Carrier N-CDMA Spectrum
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 5. Intermodulation Distortion
Products versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power and I
DQ
(
I
I
,
η
Gp
P
out
, OUTPUT POWER (WATTS Avg.) NCDMA
I
f, FREQUENCY (MHz)
I
,
η
Figure 7. 2-Carrier N-CDMA Broadband
Performance
IM3 @
1.2288 MHz BW
+IM3 @
1.2288 MHz BW
ACPR @
30 kHz BW
+ACPR @
30 kHz BW
f1
1.2288 MHz BW
f2
1.2288 MHz BW
Figure 8. CW Performance
0
5
10
15
20
25
30
70
63
56
49
42
35
28
1
10
30
0.5
IM3
Gps
η
ACPR
V
DD
= 26 Vdc, I
DQ
= 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
70
60
50
40
30
20
0
10
20
30
40
50
10
100
3rd Order
η
4
5th Order
7th Order
I
I
P
out
, OUTPUT POWER (WATTS) PEP
,
η
Gp
I
1150 mA
1000 mA
850 mA
700 mA
I
DQ
= 550 mA
12
14
16
18
20
22
24
60
50
40
30
20
10
0
1930
1940
1950
1960
1970
1980
1990
V
DD
= 26 V
P
out
= 18 W Avg.
I
DQ
= 850 mA
2Carrier NCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF)
IM3
Gps
ACPR
η
IRL
P
out
, OUTPUT POWER (WATTS)
,p
Pi 0
2
4
6
8
10
12
14
5
12
19
26
33
40
47
54
10
100
2
140
V
DD
= 26 V
I
DQ
= 850 mA
f = 1960 MHz
Gps
Pin
η
,
η
V
DD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
V
DD
= 26 Vdc
I
DQ
= 850 mA
f1 = 1960 MHz
100 kHz Tone Spacing
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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