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MRF377HR3 MRF377HR5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
%
Adjacent Channel Power Ratio
(V
DD
= 32 Vdc, P
out
= 45 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
—
—
—
—
—
-59.3
-59.3
-58.7
-58.7
-58.1
—
—
—
—
—
dBc
Typical Characteristics
(In ATSC 8VSB Single-Channel, Broadband Fixture,
50 ohm system)
(1)
Common Source Power Gain
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
G
ps
—
—
—
—
—
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
dB
Drain Efficiency
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
%
Intermodulation Distortion
(V
DD
= 32 Vdc, P
out
= 80 W Avg., I
DQ
= 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
dBc
1. Measured in push-pull configuration.