參數(shù)資料
型號(hào): MRF6P27160H
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: RF功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁數(shù): 3/12頁
文件大?。?/td> 497K
代理商: MRF6P27160H
MRF6P27160HR6
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z32
Z33
Z34, Z35
Z36, Z37
PCB
0.160
x 0.760
Microstrip
0.240
x 0.150
Microstrip
0.170
x 0.420
Microstrip
0.260
x 0.080
Microstrip
0.040
x 0.258
Microstrip
0.622
x 0.139
Microstrip
0.346
x 0.081
Microstrip
0.801
x 0.050
Microstrip
0.460
x 0.095
Microstrip
Arlon GX-0300-5022, 0.030
,
ε
r
= 2.5
Z1
Z2, Z31
Z3, Z30
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
1.011
x 0.139
Microstrip
0.150
x 0.070
Microstrip
1.500
x 0.086
Microstrip
0.050
x 0.230
Microstrip
0.170
x 0.080
Microstrip
0.144
x 0.340
Microstrip
0.400
x 0.210
Microstrip
0.280
x 0.710
Microstrip
0.461
x 0.490
Microstrip
0.357
x 0.766
Microstrip
0.284
x 0.415
Microstrip
RF
INPUT
C5
C7
+
C3
V
BIAS
B1
Z5
Z7
Z9
Z13
C1
Z4
Z6
Z8
Z12
C2
Z1
Z2
DUT
C16
C17
C18
+
V
SUPPLY
Z17
Z19
Z21
Z23
C13
RF
OUTPUT
Z32
Z33
Z3
Z31
C6
+
Z35
C4
Z11
Z10
Z15
Z14
Z37
C19
+
C10
C12
+
C8
V
BIAS
B2
C11
+
Z34
C9
Z25
Z27
Z29
Z16
Z18
Z20
Z22
C14
Z30
Z24
Z26
Z28
C21
C22
C23
+
V
SUPPLY
Z36
C24
+
R1
R2
C15
C20
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
B1, B2
Beads, Surface Mount
C1, C2
5.6 pF Chip Capacitors
C3, C8, C15, C20
3.3 pF Chip Capacitors
C4, C9
0.01
μ
F Chip Capacitors (1825)
C5, C10
2.2
μ
F, 50 V Chip Capacitors (1825)
C6, C11
22
μ
F, 25 V Tantalum Chip Capacitors
C7, C12
47
μ
F, 16 V Tantalum Chip Capacitors
C13, C14
4.3 pF Chip Capacitors
C16, C17, C21, C22
10
μ
F, 50 V Chip Capacitors (2220)
C18, C23
47
μ
F, 50 V Electrolytic Capacitors
C19, C24
330
μ
F, 63 V Electrolytic Capacitors
R1, R2
3.3 , 1/4 W Chip Resistors (1210)
Description
Part Number
Manufacturer
Fair-Rite
ATC
ATC
Kemet
Kemet
Panasonic TE Series
Kemet
ATC
Murata
Nippon
Nippon
2743019447
100B5R6CP500X
100B3R3CP500X
C1825C103J1RAC
C1825C225J5RAC
ECS-T1ED226R
T491D476K016AS
100B4R3CP500X
GRM55DR61H106KA88B
MVK50VC47RM8X10TP
NACZF331M63V
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參數(shù)描述
MRF6P27160H_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P27160H_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P27160HR5 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P27160HR6 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P27160HR6_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET