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參數(shù)資料
| 型號： | MRF6P27160H |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 497K |
| 代理商： | MRF6P27160H |
6
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1800 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
5th Order
3rd Order
20
30
40
50
1
100
I
Figure 8. Pulse CW Output Power versus
Input Power
42
58
P3dB = 54.32 dBm (270.33 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1800 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2645 MHz
56
54
52
50
36
38
40
Actual
Ideal
P1dB = 53.64 dBm (231.15 W)
57
34
P
o
,
A
Figure 9. Single-Carrier N-CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
0
70
P
out
, OUTPUT POWER (WATTS) AVG. WCDMA
35
35
25
20
45
15
50
5
60
1
10
100
55
10
η
D
,
p
,
65
η
D
G
ps
400
5
20
0
50
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1800 mA
f = 2645 MHz
10
15
5
30
20
10
η
D
,
D
G
ps
η
D
G
p
,
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 16 V
G
p
,
300
10
16
60
15
11
120
12
14
32 V
I
DQ
= 1800 mA
f = 2645 MHz
24 V
20 V
0
55
53
51
35
37
39
41
30
40
ALT1
V
DD
= 28 Vdc, I
DQ
= 1800 mA, f = 2645 MHz
SingleCarrier NCDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
0
40
13
180
240
ACPR
0.1
1
100
10
28 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ 35W NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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