- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6P27160HR6 (飛思卡爾半導(dǎo)體(中國)有限公司) RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6P27160HR6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 446K |
| 代理商： | MRF6P27160HR6 |
2
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Volta
(V
DS
= 10 Vdc, I
D
= 250
μ
Adc)
V
GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 900 mAdc)
V
GS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
5.3
—
S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.8
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2 x 900 mA, P
out
= 35 W Avg. N-CDMA,
f = 2630 and 2660 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@
±
885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
13
14.6
16
dB
Drain Efficiency
η
D
20
22.6
—
%
Adjacent Channel Power Ratio
ACPR
—
-47.8
-45
dBc
Input Return Loss
IRL
—
-13
-9
dB
1. Part is internally matched both on input and output.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6P27160H | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300HR3 | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| MRF6P3300HR5 | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| MRF6P3300H | RF Power Field Effect Transistor |
| MRF6P9220HR3 | 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6P27160HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P3300H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR3 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6P3300HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P3300HR5 | 功能描述:MOSFET RF N-CH 32V 300W NI-860C3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。