參數(shù)資料
型號: MRF6P9220HR3
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
中文描述: 880兆赫,47糯的AVG。,28 V的單個N - CDMA的橫向N溝道功率MOSFET射頻
文件頁數(shù): 6/12頁
文件大?。?/td> 437K
代理商: MRF6P9220HR3
6
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
90
10
10
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc, I
DQ
= 1600 mA, f1 = 879.95 MHz
f2 = 880.05 MHz, TwoTone Measurements
Center Frequency = 880 MHz
3rd Order
20
30
40
50
100
500
I
60
5th Order
7
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
20
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 220 W (PEP)
I
DQ
= 1600 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
25
30
40
50
1
50
I
35
45
Figure 9. Pulse CW Output Power versus
Input Power
41
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 880 MHz
61
59
57
49
Actual
Ideal
51
29
P
o
,
55
53
31
33
35
37
39
P6dB = 54.95 dBm (312.77 W)
A
Figure 10. Single-Carrier N-CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
0
55
P
out
, OUTPUT POWER (WATTS) AVG.
50
30
30
10
35
40
50
10
100
η
D
,
p
,
G
ps
ACPR
30 C
40
1
300
20
45
85 C
T
C
= 30 C
25 C
η
D
80
70
55
V
DD
= 28 Vdc, I
DQ
= 1600 mA
f = 880 MHz, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
P3dB = 54.60 dBm (288.76 W)
P1dB = 54.05 dBm (255.09 W)
25 C
25 C
85 C
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