參數(shù)資料
型號(hào): MRF6S18140HR3
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 417K
代理商: MRF6S18140HR3
MRF6S18140HR3 MRF6S18140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
12
1
0
66
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1200 mA
f = 1840 MHz
T
C
= 30 C
25 C
10
18
17
16
15
14
55
44
33
22
11
η
D
,
D
G
ps
η
D
G
p
,
13
400
85 C
30 C
25 C
85 C
Figure 12. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
p
,
13
17
0
260
15
14
100
200
16
V
DD
= 24
V
28 V
32 V
I
DQ
= 1200 mA
f = 1840
MHz
230
10
10
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
9
10
8
10
6
M
2
)
90
110
130
150
170
190
Figure 13. MTTF Factor versus Junction Temperature
10
7
210
250
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S18140HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18140HR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR3 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S18140HSR5 功能描述:射頻MOSFET電源晶體管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S1900HSR3 制造商:Freescale Semiconductor 功能描述: