參數(shù)資料
型號: MRF6S21050LSR3
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors
中文描述: 射頻功率場效應晶體管
文件頁數(shù): 11/12頁
文件大?。?/td> 429K
代理商: MRF6S21050LSR3
MRF6S21050LR3 MRF6S21050LSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E-04
ISSUE E
NI-400
MRF6S21050LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060
.005 (1.52
0.13) RADIUS OR .06
.005
(1.52
±
0.13) x 45
°
CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb
A
M
T
H
B
B
G
A
M
A
M
ccc
B
M
T
M
A
M
bbb
B
M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
M
A
M
aaa
B
M
T
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
MIN
.795
.380
.125
.275
.035
.004
.600 BSC
MAX
.805
.390
.163
.285
.045
.006
MIN
20.19
9.65
3.17
6.98
0.89
0.10
15.24 BSC
MAX
20.44
9.9
4.14
7.24
1.14
0.15
MILLIMETERS
INCHES
.057
.092
.395
.395
.120
.395
.395
.005 BSC
.010 BSC
.015 BSC
.067
.122
.405
.405
.130
.405
.405
1.45
2.33
10
10
3.05
10
10
0.127 BSC
0.254 BSC
0.381 BSC
1.7
3.1
10.3
10.3
3.3
10.3
10.3
SEE NOTE 4
CASE 465F-04
ISSUE C
NI-400S
MRF6S21050LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
E
F
2X K
M
A
M
bbb
B
M
T
A
T
C
H
B
A
DIM
A
B
C
D
E
F
H
K
M
N
R
MIN
.395
.395
.125
.275
.035
.004
.057
.092
.395
.395
.395
MAX
.405
.405
.163
.285
.045
.006
.067
.122
.405
.405
.405
MIN
10.03
10.03
3.18
6.98
0.89
0.10
1.45
2.34
10.03
10.03
10.03
MAX
10.29
10.29
4.14
7.24
1.14
0.15
1.70
3.10
10.29
10.29
10.29
MILLIMETERS
INCHES
S
.395
.005 REF
.010 REF
.015 REF
.405
10.03
0.127 REF
0.254 REF
0.38 REF
10.29
aaa
bbb
ccc
2X D
M
A
M
ccc
B
M
T
M
A
M
ccc
B
M
T
M
A
M
aaa
B
M
T
N
(LID)
M
(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R
(LID)
S
(INSULATOR)
aaa
M
A
M
B
M
T
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