- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6S21100NBR1 (飛思卡爾半導(dǎo)體(中國)有限公司) RF Power Field Effect Transistors PDF資料下載
參數(shù)資料
| 型號： | MRF6S21100NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 685K |
| 代理商： | MRF6S21100NBR1 |
6
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
TYPICAL CHARACTERISTICS
η
D
,
p
,
G
p
,
G
p
,
300
60
0
0.1
3rd Order
TWOTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
I
I
V
DD
= 28 Vdc, P
out
= 100 W (PEP)
I
DQ
= 1050 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
5th Order
7th Order
20
30
40
50
10
1
46
48
58
32
Actual
P1dB = 51.3 dBm (135.8 W)
Ideal
P
in
, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
Po
V
DD
= 28 Vdc, I
DQ
= 1050 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2140 MHz
P3dB = 51.9 dBm (156.3 W)
56
54
52
50
44
42
40
34
36
38
100
0
40
0.5
60
20
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
I
30
25
20
30
10
40
5
50
10
1
300
11
18
0.1
0
70
G
ps
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1050 mA
f = 2140 MHz
16
50
15
40
14
30
13
20
12
10
10
100
200
9
15
0
V
DD
= 12 V
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
16 V
20 V
24 V
28 V
32 V
14
12
11
10
20
40
60
80
100
120
140
160
η
D
,
η
D
10
100
35
25
15
55
45
35
17
60
1
13
180
T
C
= 25 C
30 C
85 C
25 C
25 C
85 C
30 C
30 C
25 C
V
DD
= 28 Vdc, I
DQ
= 1050 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
25 C
30 C
85 C
η
D
25 C
T
C
= 30 C
85 C
I
DQ
= 1050 mA
f = 2140 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S21140HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HSR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S23100H | RF Power Dield Effect Transistors |
| MRF6S23100HR3 | RF Power Dield Effect Transistors |
| MRF6S23100Hxx | RF Power Dield Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S21100NR1 | 功能描述:射頻MOSFET電源晶體管 2170MHZ 23W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。