- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6S23100H (飛思卡爾半導體(中國)有限公司) RF Power Dield Effect Transistors PDF資料下載
參數(shù)資料
| 型號： | MRF6S23100H |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Dield Effect Transistors |
| 中文描述： | 射頻功率Dield場效應晶體管 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 416K |
| 代理商： | MRF6S23100H |
6
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
TYPICAL CHARACTERISTICS
11
18
0.1
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
10
16
14
12
60
50
40
30
η
D
,
G
p
,
15
13
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2350 MHz
η
D
G
ps
I
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
55
15
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
TwoTone Measurements, Center Frequency = 2350 MHz
5th Order
3rd Order
20
30
40
50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
55
P
out
, OUTPUT POWER (WATTS) AVG.
35
20
30
25
20
35
10
10
100
40
40
57
P3dB = 51.88 dBm (154.14 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
f = 2350 MHz
53
49
47
34
33
36
Actual
Ideal
55
51
32
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
IM3
G
ps
η
D
,
p
,
I
P
o
,
G
p
,
V
DD
= 12 V
16
V
160
10
16
0
12
11
20
13
14
I
DQ
= 1000 mA
f = 2350 MHz
30
45
η
D
ACPR
20
V
24
V
28
V
32
V
38
1
25
40
60
80
10
20
P1dB = 51.18 dBm (131.19 W)
15
T
C
= 25 C
30 C
85 C
25 C
T
C
= 30 C
85 C
25 C
85 C
30 C
100
25 C
15
100
V
DD
= 28 Vdc, I
DQ
= 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
45
35
25
39
37
35
5
50
30 C
85 C
25 C
25 C
17
1
120
140
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S23100HR3 | RF Power Dield Effect Transistors |
| MRF6S23100Hxx | RF Power Dield Effect Transistors |
| MRF6S23100HSR3 | RF Power Dield Effect Transistors |
| MRF6S23140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S24140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。