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參數(shù)資料
| 型號： | MRF6S23100H |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Dield Effect Transistors |
| 中文描述： | 射頻功率Dield場效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 416K |
| 代理商： | MRF6S23100H |
MRF6S23100HR3 MRF6S23100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
9
90
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
8
10
7
10
6
120
140
160
180 190
M
2
)
100
110
130
150
170
200
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
2
4
6
8
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
P
(
+20
+30
0
10
40
50
60
70
80
20
20
5
15
10
0
5
10
15
20
25
25
30
WCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ +5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ +10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
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| MRF6S23100HR3 | RF Power Dield Effect Transistors |
| MRF6S23100Hxx | RF Power Dield Effect Transistors |
| MRF6S23100HSR3 | RF Power Dield Effect Transistors |
| MRF6S23140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S24140HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S23100HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S23100HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S23100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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