參數(shù)資料
型號(hào)： MRF6S27015GNR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/17頁(yè)
文件大?。?/td> 552K
代理商： MRF6S27015GNR1
MRF6S27015NR1 MRF6S27015GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical Single-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
160 mA, P
out
= 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
-65 to +175
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
(1,2)
T
J
225
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C,
7.5 W Avg., Two-Tone
Case Temperature 79
°
C, 3
W CW
R
θ
JC
2.0
2.2
°
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S27015N
Rev. 1, 6/2007
Freescale Semiconductor
Technical Data
2300-2700 MHz, 3 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF6S27015NR1
MRF6S27015GNR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF6S27015NR1
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S27015GNR1
Freescale Semiconductor, Inc., 2006-2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S27015N 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 68V 3PIN TO-270 - Bulk
MRF6S27015NR1 功能描述:射頻MOSFET電源晶體管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S27015NR1_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S27015NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S27050HR3 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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