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參數(shù)資料
| 型號： | MRF6S27015GNR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 552K |
| 代理商： | MRF6S27015GNR1 |
2
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68
Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28
Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 40
μ
Adc)
V
GS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 160 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
V
GS(Q)
—
2.8
—
Vdc
V
GG(Q)
2.2
3.1
4.4
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.4 Adc)
V
DS(on)
—
0.27
0.4
Vdc
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
11.6
—
pF
Output Capacitance
(V
DS
= 28
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
22.9
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 160 mA, P
out
= 3 W Avg., f = 2600 MHz, Single-Carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
G
ps
η
D
12.5
14
16
dB
Drain Efficiency
19
22
—
%
Adjacent Channel Power Ratio
ACPR
—
-45
-42
dBc
Input Return Loss
IRL
—
-18
-9
dB
1. V
GG
= 11/10 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF6S27015N | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 68V 3PIN TO-270 - Bulk |
| MRF6S27015NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2.7GHZ 15W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27015NR1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27015NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27050HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ WCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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