參數(shù)資料
型號： MRF6VP11KHR6
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁數(shù)： 5/11頁
文件大?。?/td> 449K
代理商： MRF6VP11KHR6
MRF6VP11KHR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
0
20
10
V
DS
, DRAINSOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain-Source Voltage
C
30
C
iss
100
10
40
C
oss
C
rss
Measured with
±
30 mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
1
100
1
T
C
= 25
°
C
10
10
V
DS
, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
,
100
200
T
J
= 200
°
C
T
J
= 175
°
C
T
J
= 150
°
C
27
10
10
80
100
25
23
21
70
60
50
40
30
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
p
,
η
D
D
η
D
24
22
20
1000
2000
G
ps
20
56
65
30
63
62
61
P
in
, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
64
60
39
59
26
58
57
31
32
33
34
35
36
37
38
P
o
,
P3dB = 61.23 dBm (1327.39 W)
Actual
Ideal
P1dB = 60.57 dBm (1140.24 W)
16
32
10
28
24
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
p
,
100
20
I
DQ
= 6000 mA
1000
2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
Figure 9. Pulsed Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS) PULSED
G
p
,
V
DD
= 30 V
12
28
0
16
24
35
V
20
45
V
200
400
600
800
1000
1200
1400
1600
50
V
40
V
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μ
sec, Duty Cycle = 20%
V
DD
= 50 Vdc, I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μ
sec, Duty Cycle = 20%
V
DD
= 50 Vdc, f = 130 MHz
Pulse Width = 100
μ
sec, Duty Cycle = 20%
I
DQ
= 150 mA, f = 130 MHz
Pulse Width = 100
μ
sec
Duty Cycle = 20%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP11KHR6_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6VP121KHR5 制造商:Freescale Semiconductor 功能描述: 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230H - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP121KHR6 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP121KHSR5 制造商:Freescale Semiconductor 功能描述:VHV6 1KW 50V NI1230HS - Tape and Reel 制造商:Freescale Semiconductor 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 965-1215 MHZ, 1 - Tape and Reel 制造商:Freescale Semiconductor 功能描述:MOSFET RF N-CH 50V NI1230H 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP121KHSR6 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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