參數(shù)資料
型號： MRF6VP11KHR6
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： RF功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁數(shù)： 2/11頁
文件大小： 449K
代理商： MRF6VP11KHR6
2
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
10
μ
Adc
Drain-Source Breakdown Voltage
(I
D
= 300 mA, V
GS
= 0 Vdc)
V
(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
100
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
5
mA
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 1600
μ
Adc)
V
GS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage
(2)
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
V
GS(Q)
1.5
2.2
3.5
Vdc
Drain-Source On-Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 4 Adc)
V
DS(on)
—
0.28
—
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.3
—
pF
Output Capacitance
(V
DS
= 50
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
147
—
pF
Input Capacitance
(V
DS
= 50
Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
iss
—
506
—
pF
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000
W Peak (200 W Avg.), f = 130 MHz,
100
μ
sec Pulse Width, 20% Duty Cycle
Power Gain
G
ps
24
26
28
dB
Drain Efficiency
η
D
69
71
—
%
Input Return Loss
IRL
—
-16
-9
dB
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP11KHR6_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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MRF6VP121KHSR6 功能描述:射頻MOSFET電源晶體管 VHV6 1kW 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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