參數(shù)資料
型號(hào): MSP430F2619SKGD1
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, UUC82
封裝: DIE-82
文件頁(yè)數(shù): 69/90頁(yè)
文件大?。?/td> 1141K
代理商: MSP430F2619SKGD1
0
5
10
15
20
25
30
85
90
95
100
105
110
115
120
125
130
135
140
145
150
Junction Temperature - TJ (C)
T
im
e
-
(Y
rs
)
SLAS697A
– MARCH 2010 – REVISED FEBRUARY 2011
Flash Memory
– Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST
VCC
MIN
TYP
MAX
UNIT
CONDITIONS
VCC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
3
7
mA
tCPT
Cumulative program time
See (1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
See(2)
35
tFTG
tBlock, 0
Block program time for 1st byte or word
See(2)
30
tFTG
Block program time for each additional byte or
tBlock, 1-63
See(2)
21
tFTG
word
tBlock, End
Block program end-sequence wait time
See(2)
6
tFTG
tMass Erase
Mass erase time
See(2)
10593
tFTG
tSeg Erase
Segment erase time
See(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the Flash Controller
's state machine (tFTG = 1/fFTG).
Figure 50. Flash Data Retention vs Junction Temperature
2010–2011, Texas Instruments Incorporated
71
Product Folder Link(s): MSP430F2619S-HT
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