參數(shù)資料
型號(hào): MT28C64432W18ABW-F70P70KTWT
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA77
封裝: 8 X 10 MM, LEAD FREE, FBGA-77
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 239K
代理商: MT28C64432W18ABW-F70P70KTWT
64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM
09005aef80c9c807
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT28C64432W18A.fm - Rev. F Pub 2/04 EN
10
2003 Micron Technology. Inc. All rights reserved.
Electrical Specifications
NOTE:
1. Stresses greater than those listed in Table 3 may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. See technical note TN-00-15, “Recommended Soldering Techniques,” for more information.
Table 3:
Absolute Maximum Ratings
Note 1
PARAMETERS/CONDITIONS
MIN
MAX
UNITS
NOTES
Operating Temperature Range
-25
+85
°C
Storage Temperature Range
-55
+125
°C
Soldering Cycle
+260
°C
Table 4:
Recommended Operating Conditions
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
VCC Supply Voltage (F_VCC and C_VCC)
VCC
1.70
1.95
V
I/O Supply Voltage
VccQ (W18)
1.70
2.24
V
VccQ (W30)
2.20
3.30
Table 5:
Capacitance
TA = +25°C; f = 1 MHz
PARAMETER/CONDITION
SYMBOL
TYP
MAX
UNITS
Input Capacitance
CIN
13
17
pF
Output Capacitance
COUT
18
20
pF
Clock Capacitance
CCLK
22
23
pF
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