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參數(shù)資料
| 型號： | MT48LC16M4A2 |
| 廠商： | Micron Technology, Inc. |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RSD Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; Power: 1W; 1kVDC and 3kVDC Isolation Options; Approved for Medical Applications; Suitable for Automated Assembly; 8, 10 and 12 pin Pinning Style Options; Optional Continuous Short Circuit Protected; Efficiency to 85% |
| 中文描述： | 同步DRAM |
| 文件頁數(shù)： | 31/55頁 |
| 文件大小： | 1458K |
| 代理商： | MT48LC16M4A2 |
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31
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2003, Micron Technology, Inc.
64Mb: x4, x8, x16
SDRAM
NOTE (continued):
4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank
m
listed in the Command (Action) column include READs or WRITEs with auto precharge
enabled and READs or WRITEs with auto precharge disabled.
8. CONCURRENT AUTO PRECHARGE: Bank
n
will initiate the auto precharge command when its burst has been interrupted
by bank
m
’s burst.
9. Burst in bank
n
continues as initiated.
10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the READ on bank
n
, CAS latency later (Figure 7).
11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the READ on bank
n
when registered (Figures 9 and 10). DQM should be used one clock prior to the WRITE
command to prevent bus contention.
12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the WRITE on bank
n
when registered (Figure 17), with the data-out appearing CAS latency later. The last
valid WRITE to bank
n
will be data-in registered one clock prior to the READ to bank
m
.
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will interrupt the WRITE on bank
n
when registered (Figure 15). The last valid WRITE to bank
n
will be data-in
registered one clock prior to the READ to bank
m
.
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the READ on bank
n
, CAS latency later. The PRECHARGE to bank
n
will begin when the READ to bank
m
is
registered (Figure 24).
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the READ on bank
n
when registered. DQM should be used two clocks prior to the WRITE command to prevent
bus contention. The PRECHARGE to bank
n
will begin when the WRITE to bank
m
is registered (Figure 25).
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank
m
will
interrupt the WRITE on bank
n
when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR begins when the READ to bank
m
is registered. The last valid WRITE to bank
n
will be data-in registered one clock prior to the READ to bank
m
(Figure 26).
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank
m
will
interrupt the WRITE on bank
n
when registered. The PRECHARGE to bank
n
will begin after
t
WR is met, where
t
WR
begins when the WRITE to bank
m
is registered. The last valid WRITE to bank
n
will be data registered one clock prior
to the WRITE to bank
m
(Figure 27).
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