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64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2003, Micron Technology, Inc.
64Mb: x4, x8, x16
SDRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
, V
DD
Q Supply
Relative to V
SS
............................................-1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
............................................-1V to +4.6V
Operating Temperature,
T
A
(commercial) ......................................0°C to +70°C
Operating Temperature,
T
A
(extended; IT parts)...................... -40°C to +85°C
Storage Temperature (plastic) ............-55°C to +150°C
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35); V
DD
, V
DD
Q = +3.3V ±0.3V
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V V
IN
V
DD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V V
OUT
V
DD
Q
Output Levels:
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= 4mA)
SYMBOL
V
DD
, V
DD
Q
V
IH
V
IL
MIN
3
2
-0.3
MAX
3.6
V
DD
+ 0.3
0.8
UNITS NOTES
V
V
V
22
22
I
I
-5
5
μA
I
OZ
V
OH
-5
2.4
5
–
μA
V
V
OL
–
0.4
V
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) ; V
DD
, V
DD
Q = +3.3V ±0.3V
PA RA M ETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
t
RC >=
t
RC (MIN)
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
t
RCD met;
No accesses in progress
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
Auto Refresh Current:
CKE = HIGH; CS# = HIGH
SY MBOL
I
DD
1
-6
150
-7E
125
-75
115
-8E
95
UNITS NOTE S
mA
3, 18,
19, 32
32
I
DD
2
2
2
2
2
mA
I
DD
3
60
45
45
35
mA
3, 12,
19, 32
I
DD
4
180
150
140
120
mA
3, 18,
19, 32
3, 12,
18, 19,
32, 33
4
t
RFC =
t
RFC (MIN)
I
DD
5
250
230
210
190
mA
t
RFC = 15.625μs
Standard
Low power (L)
I
DD
6
I
DD
7
3
1
3
1
3
1
3
1
Self Refresh Current:
CKE 0.2V
mA
0.5
0.5
0.5
0.5
MA X