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參數(shù)資料
| 型號： | MT58L512L18PB-6IT |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件頁數(shù)： | 10/32頁 |
| 文件大小： | 616K |
| 代理商： | MT58L512L18PB-6IT |
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18
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
TRUTH TABLE
OPERATION
ADDRESS CE# CE2# CE2
ZZ ADSP# ADSC# ADV# WRITE# OE#
CLK
DQ
USED
Deselected Cycle, Power-Down
None
H
X
L
X
L
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
X
L
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
H
X
L
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
X
L
H
L
X
L-H
High-Z
Deselected Cycle, Power-Down
None
L
H
X
L
H
L
X
L-H
High-Z
SNOOZE MODE, Power-Down
None
X
H
XXXX
X
High-Z
READ Cycle, Begin Burst
External
L
H
L
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
X
H
L-H
High-Z
WRITE Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
H
L
X
H
L-H
High-Z
READ Cycle, Continue Burst
Next
X
L
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
X
L
H
L
H
L-H
High-Z
READ Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L
L-H
Q
READ Cycle, Continue Burst
Next
H
X
L
X
H
L
H
L-H
High-Z
WRITE Cycle, Continue Burst
Next
X
L
H
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
L
X
H
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
L
HHHH
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
L
HHHH
H
L-H
High-Z
READ Cycle, Suspend Burst
Current
H
X
L
X
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
L
X
H
L-H
High-Z
WRITE Cycle, Suspend Burst
Current
X
L
H
L
X
L-H
D
WRITE Cycle, Suspend Burst
Current
H
X
L
X
H
L
X
L-H
D
NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW.
2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc# or BWd#) and BWE# are LOW or
GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH.
3. BWa# enables WRITEs to DQa’s and DQPa. BWb# enables WRITEs to DQb’s and DQPb. BWc# enables WRITEs to DQc’s
and DQPc. BWd# enables WRITEs to DQd’s and DQPd. DQPa and DQPb are only available on the x18 and x36 versions.
DQPc and DQPd are only available on the x36 version.
4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held
HIGH throughout the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more
byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing
diagram for clarification.
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| MT58L512L18PS-10 | 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP TYPE 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-6 | 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-7.5 IT | 制造商:Cypress Semiconductor 功能描述: |
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