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參數(shù)資料
| 型號(hào)： | MT58L512L18PB-6IT |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件頁(yè)數(shù)： | 14/32頁(yè) |
| 文件大?。?/td> | 616K |
| 代理商： | MT58L512L18PB-6IT |
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8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
TQFP THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Thermal Resistance
Test conditions follow standard test
1-layer
θ
JA
40
°C/W
1
(Junction to Ambient)
methods and procedures for measuring
Thermal Resistance
thermal impedance, per EIA/JESD51.
θ
JC
8
°C/W
1
(Junction to Top of Case)
FBGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
θ
JA
40
°C/W
1, 2
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
θ
JC
9
°C/W
1, 2
Junction to Pins
θ
JB
17
°C/W
1, 2
(Bottom)
NOTE: 1. This parameter is sampled.
2. Preliminary package data.
BGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
θ
JA
40
°C/W
1
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
θ
JC
9
°C/W
1
Junction to Bumps
θ
JB
17
°C/W
1
(Bottom)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512L18PF-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-10 | 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP TYPE 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-6 | 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18PS-7.5 IT | 制造商:Cypress Semiconductor 功能描述: |
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