參數(shù)資料
型號: MT58L512L18PB-6IT
元件分類: SRAM
英文描述: 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119
封裝: 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119
文件頁數(shù): 19/32頁
文件大?。?/td> 616K
代理商: MT58L512L18PB-6IT
26
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
READ TIMING PARAMETERS
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tKC
5.0
6.0
7.5
10
ns
fKF
200
166
133
100
MHz
tKH
2.0
2.3
2.5
3.0
ns
tKL
2.0
2.3
2.5
3.0
ns
tKQ
3.1
3.5
4.0
5.0
ns
tKQX
1.0
1.5
ns
tKQLZ
0
1.5
ns
tKQHZ
3.1
3.5
4.2
5.0
ns
tOEQ
3.1
3.5
4.2
5.0
ns
tOELZ
0000
ns
tOEHZ
3.0
3.5
4.2
4.5
ns
READ TIMING 3
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
GW#, BWE#,
BWa#-BWd#
Q
High-Z
tKQLZ
tKQX
tKQ
ADV#
tOEHZ
tKQ
Single READ
BURST READ
tOEQ
tOELZ
tKQHZ
ADV#
suspends
burst.
Burst wraps around
to its initial state.
tAAH
tAAS
tWH
tWS
tADSH
tADSS
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A1)
Q(A2)
Q(A2 + 1)
Q(A2 + 3)
A2
A3
(NOTE 1)
Deselect
cycle.
(NOTE 3)
(NOTE 4)
Burst continued with
new base address.
DON’T CARE
UNDEFINED
NOTE: 1. Q(A2) refers to output from address A2. Q(A2 + 1) refers to output from the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. Timing is shown assuming that the device was not enabled before entering into this sequence. OE# does not cause Q
to be driven until after the following clock rising edge.
4. Outputs are disabled within one clock cycle after deselect.
tAS
1.5
2.0
ns
tADSS
1.5
2.0
ns
tAAS
1.5
2.0
ns
tWS
1.5
2.0
ns
tCES
1.5
2.0
ns
tAH
0.5
ns
tADSH
0.5
ns
tAAH
0.5
ns
tWH
0.5
ns
tCEH
0.5
ns
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
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