參數(shù)資料
型號(hào): MT58V1MV18DT-10
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 1M X 18 CACHE SRAM, 5 ns, PQFP100
封裝: PLASTIC, TQFP-100
文件頁數(shù): 14/34頁
文件大?。?/td> 521K
代理商: MT58V1MV18DT-10
18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
21
2003 Micron Technology, Inc.
SNOOZE MODE
SNOOZE MODE is a low-current, power-down
mode in which the device is deselected and current is
reduced to ISB2Z. The duration of SNOOZE MODE is
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
ZZ is an asynchronous, active HIGH input that
causes the device to enter SNOOZE MODE. When ZZ
becomes a logic HIGH, ISB2Z is guaranteed after the
setup time tZZ is met. Any READ or WRITE operation
pending when the device enters SNOOZE MODE is not
guaranteed
to
complete
successfully.
Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed.
NOTE:
1. This parameter is sampled.
Figure 10:
SNOOZE MODE Waveform
Table 18:
SNOOZE MODE Electrical Characteristics
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Current during SNOOZE MODE
ZZ
VIH
ISB2Z
30
mA
ZZ active to input ignored
tZZ
2(tKC)
ns
ZZ inactive to input sampled
tRZZ
2(tKC)
ns
ZZ active to snooze current
tZZI
2(tKC)
ns
ZZ inactive to exit snooze current
tRZZI
0ns
t
ZZ
I
SUPPLY
CLK
ZZ
t RZZ
ALL INPUTS
(except ZZ)
DON’T CARE
I
ISB2Z
t
ZZI
t
RZZI
Outputs (Q)
High-Z
DESELECT or READ Only
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