- 您現在的位置：買賣IC網 > Datasheet目錄45 > NCP1611BDR2G (ON Semiconductor)IC PFC CTLR HE ENHANCED 8-SOIC Datasheet資料下載
參數資料
| 型號： | NCP1611BDR2G |
| 廠商： | ON Semiconductor |
| 文件頁數： | 3/29頁 |
| 文件大?。?/td> | 879K |
| 描述： | IC PFC CTLR HE ENHANCED 8-SOIC |
| 標準包裝： | 3,000 |
| 系列： | * |
第1頁第2頁當前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
NCP1611
http://onsemi.com
3
MAXIMUM RATINGS TABLE
Symbol
Pin
Rating
Value
Unit
V
CC
7
Power Supply Input
0.3, + 35
V
V
CONTROL
1
V
CONTROL
pin (Note 1)
0.3, V
CONTROL
MAX (*)
V
V
sense
2
V
sense
pin (Note 5)
0.3, +10
V
FFcontrol
3
FFcontrol pin
0.3, +10
V
CS/ZCD
4
Input Voltage
Current Injected to pin 4 (Note 4)
0.3, +35
+5
V
mA
DRV
6
Driver Voltage (Note 1)
Driver Current
0.3, V
DRV
(*)
500, +800
V
mA
FB
8
Feedback pin
0.3, +10
V
P
D
R
qJA
Power Dissipation and Thermal Characteristics
Maximum Power Dissipation @ T
A
= 70癈
Thermal Resistance Junction to Air
550
145
mW
癈/W
T
J
Operating Junction Temperature Range
40 to +125
癈
T
Jmax
Maximum Junction Temperature
150
癈
T
Smax
Storage Temperature Range
65 to 150
癈
T
Lmax
Lead Temperature (Soldering, 10s)
300
癈
MSL
Moisture Sensitivity Level
1
ESD Capability, HBM model (Note 2)
> 2000
V
ESD Capability, Machine Model (Note 2)
> 200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
CONTROL
MAX is the pin1 clamp voltage and V
DRV
is the DRV clamp voltage (V
DRVhigh
). If V
CC
is below V
DRVhigh
, V
DRV
is V
CC
.
2. This device(s) contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per JEDEC Standard JESD22A114E
Machine Model Method 200 V per JEDEC Standard JESD22A115A
3. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
4. Maximum CS/ZCD current that can be injected into pin4
VCC
GND
CS/ZCD
NCP1611
ESD diode
ESD diode
R1
Ipin4
Maintain Ipin4
below 5 mA
2k
7.4V
CS/ZCD
circuitry
5. Recommended maximum V
sense
voltage for optimal operation is 4.5 V.
相關PDF資料 |
PDF描述 |
|---|---|
| NCP1651DR2G | IC PFC CONTROLLER CCM/DCM 16SOIC |
| NCP1654BD133R2G | IC PFC CCM 133KHZ 8-SOIC |
| NCP1927DR2G | IC CTLR PFC/FLYBACK 16-SOIC |
| NCP380HMU21AATBG | IC CURRENT LIMIT SWITCH 6-UDFN |
| NCT1008DMT3R2G | TMP DIO MON/SMBUS 4CH 8WDFN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NCP1611GEVB | 制造商:ON Semiconductor 功能描述:PG - ACDC CONVERSION - Bulk 制造商:ON Semiconductor 功能描述:EVAL BOARD, NCP1611, POWER FACTOR CORRECTION; Silicon Manufacturer:On Semiconductor; Silicon Core Number:NCP1611; Kit Application Type:Power Management; Application Sub Type:Power Factor Correction (PFC) ;RoHS Compliant: Yes |
| NCP1612ADR2G | 功能描述:功率因數校正 IC RoHS:否 制造商:Fairchild Semiconductor 開關頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| NCP1612BDR2G | 制造商:ON Semiconductor 功能描述:ENHANCED HIGH-EFFICIENCY - Tape and Reel |
| NCP1612GEVB | 制造商:ON Semiconductor 功能描述:PG - ACDC CONVERSION - Bulk 制造商:ON Semiconductor 功能描述:EVAL BOARD, NCP1612, POWER FACTOR CORRECTION; Silicon Manufacturer:On Semiconductor; Silicon Core Number:NCP1612; Kit Application Type:Power Management; Application Sub Type:Power Factor Correction (PFC) ;RoHS Compliant: Yes |
| NCP1615ADR2G | 制造商:ON Semiconductor 功能描述:HV HIGH EFFICIENCY PFC CO - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。