參數(shù)資料
型號(hào)： NCP1611BDR2G
廠商： ON Semiconductor
文件頁數(shù)： 5/29頁
文件大?。?/td> 879K
描述： IC PFC CTLR HE ENHANCED 8-SOIC
標(biāo)準(zhǔn)包裝： 3,000
系列： *
NCP1611
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS (Conditions: V
CC
 = 15 V, T
J
 from 40癈 to +125癈, unless otherwise specified)
Symbol
Unit
Max
Typ
Min
Rating
CURRENT SENSE AND ZERO CURRENT DETECTION BLOCKS
T
LEB,OCP
OverCurrent Protection Leading Edge Blanking Time (guaranteed by design)
100
200
350
ns
T
LEB,OVS
Overstress Leading Edge Blanking Time (guaranteed by design)
50
100
170
ns
T
OCP
OverCurrent Protection Delay from V
CS/ZCD
 > V
CS(th)
 to DRV low
(dV
CS/ZCD
 / dt = 10 V/ms)

40
200
ns
V
ZCD(th)H
Zero Current Detection, V
CS/ZCD
 rising
675
750
825
mV
V
ZCD(th)L
Zero Current Detection, V
CS/ZCD
 falling
200
250
300
mV
V
ZCD(hyst)
Hysteresis of the Zero Current Detection Comparator
375
500

mV
R
ZCD/CS
V
ZCD(th)H
 over V
CS(th)
 Ratio
1.4
1.5
1.6

V
CL(pos)
CS/ZCD Positive Clamp @ I
CS/ZCD
 = 5 mA

15.6

V
I
ZCD(bias)
CS/ZCD Pin Bias Current, V
CS/ZCD
 = 0.75 V
0.5

2.0
mA
I
ZCD(bias)
CS/ZCD Pin Bias Current, V
CS/ZCD
 = 0.25 V
0.5

2.0
mA
T
ZCD
(V
CS/ZCD
 < V
ZCD(th)L
) to (DRV high)

60
200
ns
T
SYNC
Minimum ZCD Pulse Width

110
200
ns
T
WDG
Watch Dog Timer
80
200
320
ms
T
WDG(OS)
Watch Dog Timer in OverStress Situation
400
800
1200
ms
T
TMO
TimeOut Timer
20
30
50
ms
I
ZCD(gnd)
Source Current for CS/ZCD pin impedance Testing

250

mA
STATIC OVP
D
MIN
Duty Cycle, V
FB
 = 3 V, V
control
 Pin Open


0
%
ONTIME CONTROL
T
ON(LL)
Maximum On Time, V
sense
 = 1.4 V and V
control
 maximum (CrM)
22
25
29
ms
T
ON(LL)2
On Time, V
sense
 = 1.4 V and V
control
 = 2.5 V (CrM)
10.5
12.5
14.0
ms
T
ON(HL)
Maximum On Time, V
sense
 = 2.8 V and V
control
 maximum (CrM)
7.3
8.5
9.6
ms
T
ON(LL)(MIN)
Minimum On Time, V
sense
 = 1.4 V (not tested, guaranteed by characterization)


200
ns
T
ON(HL)(MIN)
Minimum On Time, V
sense
 = 2.8 V (not tested, guaranteed by characterization)


100
ns
FEEDBACK OVER AND UNDERVOLTAGE PROTECTIONS (OVP AND UVP)
R
softOVP
Ratio (Soft OVP Threshold, V
FB
 rising) over V
REF
 (V
softOVP
/V
REF
)
(guaranteed by design)
104
105
106
%
R
softOVP(HYST)
Ratio (Soft OVP Hysteresis) over V
REF
 (guaranteed by design)
1.5
2.0
2.5
%
R
fastOVP2
Ratio (Fast OVP Threshold, V
FB
 rising) over V
REF
 (V
fastOVP
/V
REF
)
(guaranteed by design)
106
107
108
%
R
UVP
Ratio (UVP Threshold, V
FB
 rising) over V
REF
 (V
UVP
/V
REF
)
(guaranteed by design)
8
12
16
%
R
UVP(HYST)
Ratio (UVP Hysteresis) over V
REF
 (guaranteed by design)


1
%
(I
B
)
FB
FB Pin Bias Current @ V
FB
 = V
OVP
 and V
FB
 = V
UVP
50
200
450
nA
BROWNOUT PROTECTION AND FEEDFORWARD
V
BOH
BrownOut Threshold, V
sense
 rising
0.96
1.00
1.04
V
V
BOL
BrownOut Threshold, V
sense
 falling
0.86
0.90
0.94
V
V
BO(HYST)
BrownOut Comparator Hysteresis
60
100

mV
T
BO(blank)
BrownOut Blanking Time
35
50
65
ms
I
CONTROL(BO)
V
control
 Pin Sink Current, V
sense
 < V
BOL
40
50
60
mA
6.  There is actually a minimum deadtime that is the delay between the core reset detection and the DRV turning on (T
ZD
 parameter of the
Current Sense and Zero Current Detection Blocks section).
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