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參數(shù)資料
| 型號： | NTA4001N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET(小信號N溝道20V，238mA MOSFET 帶ESD保護(hù)) |
| 中文描述： | 小信號MOSFET（小信號?溝道20V的，二百三十八毫安MOSFET的帶靜電放電保護(hù)） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | NTA4001N |
NTA4001N
http://onsemi.com
2
Electrical Characteristics
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
20
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 20 V
1.0
A
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
10 V
±
100
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= 3 V, I
D
= 100 A
0.5
1.0
1.5
V
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 10 mA
1.5
3.0
V
GS
= 2.5 V, I
D
= 10 mA
2.2
3.5
Forward Transconductance
g
FS
V
DS
= 3 V, I
D
= 10 mA
80
mS
CAPACITANCES
Input Capacitance
C
ISS
11.5
Output Capacitance
C
OSS
V
DS
= 5 V, f = 1 MHz,
V
GS
= 0 V
10
pF
Reverse Transfer Capacitance
C
RSS
3.5
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(ON)
13
ns
Rise Time
t
r
V
GS
= 4.5 V, V
DS
= 5 V,
I
D
= 10 mA, R
G
= 10
15
TurnOff Delay Time
t
d(OFF)
98
ns
Fall Time
t
f
60
DrainSource Diode Characteristics
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 10 mA
0.66
0.8
V
NOTES:
2. Pulse Test: pulse width
3. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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