參數(shù)資料
型號(hào)： NX3008CBKS
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 30 - 30 V, 350 - 200 mA N-P-channel Trench MOSFET
中文描述： 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, 6 PIN
文件頁數(shù)： 3/21頁
文件大?。?/td> 1509K
代理商： NX3008CBKS
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
3 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[3]
Measured between all pins.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
TR2 (P-channel)
V
DS
V
GS
I
D
Parameter
Conditions
Min
Max
Unit
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-30
8
-200
-125
-0.8
280
320
990
V
V
mA
mA
A
mW
mW
mW
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 μs
T
amb
= 25 °C
[1]
-
[1]
-
I
DM
P
tot
peak drain current
total power dissipation
-
[2]
-
[1]
-
T
sp
= 25 °C
-
TR1 (N-channel)
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
30
8
350
230
1.4
280
320
990
V
V
mA
mA
A
mW
mW
mW
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 μs
T
amb
= 25 °C
[1]
-
[1]
-
I
DM
P
tot
peak drain current
total power dissipation
-
[2]
-
[1]
-
T
sp
= 25 °C
-
Per device
P
tot
T
j
T
amb
T
stg
TR1 (N-channel), Source-drain diode
I
S
source current
TR2 (P-channel), Source-drain diode
I
S
source current
TR1 N-channel), ESD maximum rating
V
ESD
electrostatic discharge voltage
TR2 (P-channel), ESD maximum rating
V
ESD
electrostatic discharge voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
= 25 °C
[2]
-
445
150
150
150
mW
°C
°C
°C
-55
-55
-65
T
amb
= 25 °C
[1]
-
300
mA
T
amb
= 25 °C
[1]
-
-200
mA
HBM
[3]
-
2000
V
HBM
[3]
-
2000
V
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008CBKS,115 功能描述:MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008CBKV 制造商:NXP Semiconductors 功能描述:MOSFET N/P CH 30/30V 400/220MASOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:330mW ;RoHS Compliant: Yes
NX3008CBKV,115 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008NBK 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain
NX3008NBK,215 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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