參數(shù)資料
型號(hào)： NX3008NBKV
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 30 V, 400 mA dual N-channel Trench MOSFET
中文描述： SMALL SIGNAL, FET
封裝： PLASTIC, 6 PIN
文件頁數(shù)： 1/17頁
文件大?。?/td> 863K
代理商： NX3008NBKV
1.
Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
ST6
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
30
8
400
V
V
mA
V
GS
= 4.5 V; T
amb
= 25 °C
[1]
-
V
GS
= 4.5 V; I
D
= 350 mA;
T
j
= 25 °C
-
1
1.4
相關(guān)PDF資料
PDF描述
NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET
NX3008NBK 30 V, 400 mA N-channel Trench MOSFET
NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET
NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET
NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008NBKV,115 功能描述:MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008NBKW 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 350MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323, Transistor Polarity:N Channel, Continuous Drai
NX3008NBKW,115 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008PBK 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 230MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBK,215 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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