參數(shù)資料
型號(hào)： NX3008CBKS
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 30 - 30 V, 350 - 200 mA N-P-channel Trench MOSFET
中文描述： 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, 6 PIN
文件頁(yè)數(shù)： 5/21頁(yè)
文件大?。?/td> 1509K
代理商： NX3008CBKS
NX3008CBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
5 of 21
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source
Fig 4.
001aao253
V
DS
(V)
-10
-1
-10
2
-10
-1
-1
-10
-1
-10
l
D
(A)
-10
-2
(1)
(2)
(3)
(4)
(5)
Table 6.
Symbol
Per device
R
th(j-a)
TR1 (N-channel)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to ambient
in free air
[1]
-
-
300
K/W
thermal resistance from junction to ambient
in free air
[1]
-
390
340
-
445
390
130
K/W
K/W
K/W
[2]
-
R
th(j-sp)
TR2 (P-channel)
R
th(j-a)
thermal resistance from junction to solder point
-
thermal resistance from junction to ambient
in free air
[1]
-
390
340
-
445
390
130
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from junction to solder point
-
相關(guān)PDF資料
PDF描述
NX3008CBKV 30 - 30 V, 400 - 220 mA N-P-channel Trench MOSFET
NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET
NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET
NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008CBKS,115 功能描述:MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008CBKV 制造商:NXP Semiconductors 功能描述:MOSFET N/P CH 30/30V 400/220MASOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:330mW ;RoHS Compliant: Yes
NX3008CBKV,115 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008NBK 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain
NX3008NBK,215 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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