參數(shù)資料
型號: P28F010-120
廠商: INTEL CORP
元件分類: PROM
英文描述: 1024K (128K x 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 120 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數(shù): 19/30頁
文件大小: 405K
代理商: P28F010-120
28F010
DC CHARACTERISTICSDCMOS COMPATIBLEDExtended Temperature
Products
(Continued)
Symbol
Parameter
Notes
Limits
Unit
Test Conditions
Min
Typical
(4)
Max
V
PPL
V
PP
during Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Programs are
Inhibited when V
PP
e
V
PPL
V
PPH
V
PP
during Read/Write
Operations
11.40
12.60
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.5
V
CAPACITANCE
T
A
e
25
§
C, f
e
1.0 MHz
Symbol
Parameter
Notes
Limits
Unit
Conditions
Min
Max
C
IN
Address/Control Capacitance
3
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
3
12
pF
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. Not 100% tested: characterization data available.
3. Sampled, not 100% tested.
4. ‘‘Typicals’’ are not guaranteed, but based on a limited number of samples from production lots.
19
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