參數(shù)資料
型號: P28F020-120
廠商: INTEL CORP
元件分類: PROM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數(shù): 35/38頁
文件大小: 878K
代理商: P28F020-120
E
4.11
28F020
35
AC Characteristics
—Alternate CE# Controlled Writes
(1)
—Commercial and
Extended Temperature Products
Versions
28F020-90
(4)
28F020-120
(4)
28F020-150
(4)
Symbol
Characteristics
Notes
Min
Max
Min
Max
Min
Max
Unit
t
AVAV
Write Cycle Time
90
120
150
ns
t
AVEL
Address Set-Up
Time
0
0
0
ns
t
ELAX
Address Hold Time
50
55
55
ns
5
60
60
t
DVEH
Data Set-Up Time
40
45
45
ns
5
50
50
t
EHDX
Data Hold Time
10
10
10
ns
t
EHGL
Write Recovery Time
before Read
6
6
6
μs
t
GHWL
Read Recovery
Time before Write
2
0
0
0
ns
t
WLEL
Write Enable Set-Up
Time before Chip
Enable
0
0
0
ns
t
EHWH
Write Enable Hold
Time
0
0
0
ns
t
ELEH
Write Pulse Width
50
60
70
ns
5
60
60
t
EHEL
Write Pulse Width
High
20
20
20
ns
t
EHEH1
Duration of Prog.
Operation
3
10
10
10
μs
t
EHEH2
Duration of Erase
Operation
3
9.5
9.5
9.5
ms
t
VPEL
V
PP
Set-Up Time to
Chip Enable Low
2
1
1
1
μs
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