參數(shù)資料
型號： PC56F8006VLF
廠商： Freescale Semiconductor
文件頁數(shù)： 45/106頁
文件大?。?/td> 0K
描述： DSP 16BIT 48-LQFP
標準包裝： 250
系列： 56F8xxx
核心處理器： 56800
芯體尺寸： 16-位
速度： 32MHz
連通性： I²C，LIN，SCI，SPI
外圍設(shè)備： LVD，POR，PWM，WDT
輸入/輸出數(shù)： 40
程序存儲器容量： 16KB（8K x 16）
程序存儲器類型： 閃存
RAM 容量： 1K x 16
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 24x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 48-LQFP
包裝： 托盤
Specifications
MC56F8006/MC56F8002 Digital Signal Controller, Rev. 4
Freescale Semiconductor
43
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
8.3
Thermal Characteristics
This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power
dissipation on I/O pins is usually small compared to the power dissipation in on-chip logic and voltage regulator circuits, and
it is user-determined rather than being controlled by the MCU design. To take PI/O into account in power calculations, determine
the difference between actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of
unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very small.
Table 13. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulses per Pin
—
3
Machine
Series Resistance
R1
0
Storage Capacitance
C
200
pF
Number of Pulses per Pin
—
3
Latch-up
Minimum inpUt Voltage Limit
–2.5
V
Maximum Input Voltage Limit
7.5
V
Table 14. 56F8006/56F8002 ESD Protection
Characteristic 1
1 Parameter is achieved by design characterization on a small sample size from typical devices un-
der typical conditions unless otherwise noted.
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
—
V
ESD for Machine Model (MM)
200
—
V
ESD for Charge Device Model (CDM)
750
—
V
Latch-up current at TA= 85
oC (I
LAT)
100
mA
Table 15. 28SOIC Package Thermal Characteristics
Characteristic
Comments
Symbol
Value
(LQFP)
Unit
Junction to ambient
Natural convection
Single layer board
(1s)
RJA
70
°C/W
Junction to ambient
Natural convection
Four layer board
(2s2p)
RJMA
47
°C/W
Junction to ambient
(@200 ft/min)
Single layer board
(1s)
RJMA
55
°C/W
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