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參數(shù)資料
| 型號(hào)： | PCD6001U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | Digital telephone answering machine chip |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, UUC |
| 文件頁(yè)數(shù)： | 57/96頁(yè) |
| 文件大?。?/td> | 385K |
| 代理商： | PCD6001U |
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2001 Apr 17
57
Philips Semiconductors
Product specification
Digital telephone answering machine chip
PCD6001
12.1.1
DTAM
EXTERNAL MEMORY USING A PARALLEL FLASH
A parallel flash memory can be connected to the PCD6001 chip as shown in Fig.23. The MAGP and P2GP bits in the
XRAM-mapped Configuration Register (ConfReg) must be set. Clearing P4.3 will enable the flash memory.
12.1.2
DTAM
EXTERNAL MEMORY INTERFACE USING A
4-
WIRE SERIAL FLASH
A 4-wire serial flash memory (like SPI or Microwire flash memory) can be connected to the PCD6001 chip as shown in
Fig.24. P4.3 must be level shifted when using a 5 V serial flash memory. P4.1 and P4.2 must be pulled to 3 V with a
resistor. When using a 5 V flash memory the DO output of the flash must be level-shifted to 3 V with 2 resistors
(1 and 1.5 k
).
handbook, full pagewidth
MGT437
1 k
P4.3
1 k
CEN
RD
OEN
WR
WN
RY/BYN
P3.x
P1.x
P2, MA7 to MA0 and P4.0 to P4.2
VDD3V
P0
IO7 to IO0
A18 to A0
A19
PCD6001
4/8 MBIT
FLASH
Fig.23 Parallel flash memory connection.
handbook, full pagewidth
MGT438
1 k
P4.3
1 k
CEN
P4.4/FSI
DO
P4.2/FSO
DI
SK
P4.1/FSK
VDD3V
VDD3V/VDD5V
PCD6001
SERIAL
FLASH
Fig.24 Serial flash memory connection.
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