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參數(shù)資料
| 型號(hào)： | PDTA114ZT |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP resistor-equipped transistor |
| 中文描述： | PNP配電阻型晶體管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | PDTA114ZT |
1999 May 25
6
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA143ZT
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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| PDTA115EK | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTA115EEF | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTA115ES | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
| PDTA115E | PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PDTA115E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ |
| PDTA115EE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ |
| PDTA115EE T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA115EE,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PNP W/RES 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PDTA115EE115 | 制造商:NXP Semiconductors 功能描述:TRANS PNP W/RES 50V SOT-416 |
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